| MgB2超导薄膜的化学气相沉积 |
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| 引用本文： | 迟振华,王天生,漆汉宏,于栋利,何巨龙,刘世民,田永君,李东春. MgB2超导薄膜的化学气相沉积[J]. 物理测试, 2003, 0(4): 3-5 |
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| 作者姓名： | 迟振华 王天生 漆汉宏 于栋利 何巨龙 刘世民 田永君 李东春 |
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| 作者单位： | 燕山大学 |
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| 基金项目： | 国家自然科学基金(No.50171058)资助项目 |
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| 摘 要： | 探索了采用化学气相沉积法，在LaAlO3单晶基片上原位制备了MgB2超导薄膜。X射线衍射(XRD)分析表明薄膜的相纯度不理想，扫描电子显微镜(SEM)观察表明薄膜的表面比较粗糙，用标准四引线法测得薄膜的起始转变温度（Tconset)为30K，零电阻温度(Tc0)为18K。
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| 关 键 词： | 二硼化镁 超导薄膜 化学气相沉积 原位反应 XRD SEM 起始转变温度 |
| 修稿时间： | 2003-03-11 |
CHEMICAL VAPOR DEPOSITION OF SUPERCONDUCTING MgB2 THIN FILM |
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| CHI Zhenhua WANG Tiansheng QI Hanhong YU Dongli HE Julong LIU Shimin TIAN Tongjun LI Dongchun. CHEMICAL VAPOR DEPOSITION OF SUPERCONDUCTING MgB2 THIN FILM[J]. Physics Examination and Testing, 2003, 0(4): 3-5 |
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| Authors: | CHI Zhenhua WANG Tiansheng QI Hanhong YU Dongli HE Julong LIU Shimin TIAN Tongjun LI Dongchun |
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| Abstract: | Superconducting MgB2 thin film was successfully in situ deposited onto single crystal LAO (LaAlO3) substrate by chemical vapor deposition. There existed several kinds of impurities in the result-ant thin film by XRD analysis. The surface morphology of this thin film was very rough by SEM observa-tion. The superconducting onset transition temperature and zero resistance temperature of this thin film were confirmed to be 30 K and 18 K, respectively by Standard four-probe measurement. |
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| Keywords: | MgB2 superconducting thin film chemical vapor deposition in situ |
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