低能电子束散射模拟在邻近效应修正中的应用

文章运用Monte Carlo方法模拟具有高斯分布特征的低能入射电子束斑在PMMA-村底中的复杂散射过程，分别得到了电子束在抗蚀剂中的穿透深度和能量沉积分布圈，并利用模拟结果进行邻近效应的修正．得到修正后的剂量数据文件。结果表明：采用修正后的剂量曝光，光刺胶中的能量沉积比较均匀．曝光分辨率有较大幅度的提高。该研究将对低能电子束曝光技术的定量研究和邻近效应修正技术的探索具有较高的理论指导意义。

An Application of the Monte Carlo Simulation of Low-Electron Beam Lithography in Proximity Effect Correction

This paper simulates the complex scattering process of the low-energy electron beams with the Gaussian distribution in the PMMA- substrate by a Monte Carlo method. The penetration depth of electrons and energy deposition distribution are presented respectively under different exposure conditions. With these simulating results, a new algorithm is developed to correct the proximity effect by allocating shot dose. The simulating result shows that the energy deposition distribution is average comparatively, and the exposure resolution is enhanced largely by using the corrected shot dose. This work would provide some theoretical basis for the researches of electron beam lithography and proximity effect correction.