蒸栅前退火与AlGaN/GaN HEMT噪声性能关系的研究

为进一步提高AlGaN/GaN HEMT的噪声性能，如何才能降低其相对较高的栅漏电是较为棘手的问题之一。作者通过实验证明了可降低其噪声的器件制作过程中的一项工艺步骤。两个AlGaN/GaN样片在刻蚀栅槽后被分别不同处理，一个蒸发栅金属前退火，另一个直接蒸发栅金属。比较二者的Ig－Vgd直流特性曲线，可发现蒸栅前进行退火处理可大大降低栅漏电。数据分析表明：退火可提高肖特基势垒；刻蚀过程中的等离子体可引发损伤，退火导致的损伤消除是栅漏电减小的主要原因。作者引用了一个噪声模型来证明蒸栅前退火确实可以有效地提高AlGaN/GaN HEMT的噪声性能。

Annealing before gate metal deposition related noise performance in AlGaN/GaN HEMTs

For a further improvement of the noise performance in AlGaN/GaN HEMTs,reducing the relatively high gate leakage current is a key issue.In this paper,an experiment was carried out to demonstrate that one method during the device fabrication process can lower the noise.Two samples were treated differently after gate recess etching:one sample was annealed before metal deposition and the other sample was left as it is.From a comparison of their Ig-Vg characteristics,a conclusion could be drawn that the annealin...