| 基于腔面非注入技术的大功率半导体激光器 |
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| 引用本文： | 张世祖,杨红伟,花吉珍,陈宏泰,陈玉娟,家秀云,徐会武,沈牧. 基于腔面非注入技术的大功率半导体激光器[J]. 微纳电子技术, 2009, 46(5) |
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| 作者姓名： | 张世祖 杨红伟 花吉珍 陈宏泰 陈玉娟 家秀云 徐会武 沈牧 |
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| 作者单位： | 中国电子科技集团公司第十三研究所,石家庄,050051 |
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| 摘 要： | 采用腔面电流非注入技术,提高了808nm半导体激光器灾变性光学损伤(COD)阈值。通过腐蚀GaAs高掺杂层的方法,在半导体激光器腔面附近形成电流非注入区,以此来减少腔面处的载流子注入。载流子注入水平的降低,减少了腔面处非辐射复合的发生,因而提高了激光器的灾变性光学损伤阈值。应用电流非注入技术制作的器件的最大输出功率达到3.7W;而应用常规工艺制作的器件的最大输出功率为3.1W。同常规工艺相比,采用该技术使器件的最大输出功率提高了近20%。
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| 关 键 词： | 电流非注入区 808nm半导体激光器 灾变性光学损伤 非辐射复合 |
High Power Laser Diode with Non-Injection Regions Near the Facet |
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| Zhang Shizu,Yang Hongwei,Hua Jizhen,Chen Hongtai,Chen Yujuan,Jia Xiuyun,Xu Huiwu,Shen Mu. High Power Laser Diode with Non-Injection Regions Near the Facet[J]. Micronanoelectronic Technology, 2009, 46(5) |
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| Authors: | Zhang Shizu Yang Hongwei Hua Jizhen Chen Hongtai Chen Yujuan Jia Xiuyun Xu Huiwu Shen Mu |
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| Affiliation: | The 13th Research Institute;CETC;Shijiazhuang 050051;China |
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| Abstract: | The technology of non-injection regions for improving the catastrophic optical damage (COD) level of the 808 nm laser diode was introduced. By etching p+-GaAs,non-injection regions was formed near the facets,where the injection current was blocked.The non-injection regions can reduce carriers injecting to facts.As a result that the rate of the nonradiative recombination is reduced,and the COD level is higher than before.The maximum output power of laser diodes with non-injection regions is 3.7 W,and that of... |
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| Keywords: | non-injection regions 808 nm laser diode COD nonradiative recombination |
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