| 基于APD参数建模的单光子探测研究 |
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| 引用本文： | 艾青,万钧力. 基于APD参数建模的单光子探测研究[J]. 量子电子学报, 2013, 30(2): 219-224 |
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| 作者姓名： | 艾青 万钧力 |
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| 作者单位： | 1 湖北理工学院电气与电子信息工程学院，湖北 黄石 435003；2 三峡大学电气与新能源学院， 湖北 宜昌 443002 |
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| 基金项目： | 湖北省自然科学基金，湖北理工学院科研项目基金 |
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| 摘 要： | 单光子探测技术对于量子密钥分配乃至量子通信有重要的意义。针对单光子雪崩光电二极管（SPADs）的单光子量子效率（SPQE），提出了一种严格的数学模型。模型适用于工作波长为1.3和1.5um的In052Al048As、InP倍增层和In052Al048As-InP异质结倍增层的SPADs。模型作为器件结构、工作电压、倍增层材料的函数，可用来优化SPQE，进而评估和优化盖革模式下APDs的性能。
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| 关 键 词： | 光电子学 单光子量子效率 雪崩概率 暗计数 雪崩光电二极管 |
| 收稿时间： | 2012-02-28 |
| 修稿时间： | 2012-07-10 |
Investigation of single-photon detection based on APD parametric modeling |
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| Affiliation: | 1 College of Electrical and Electronic Information Engineering, Hubei PolyTechnic University, Huangshi 435003, China;2 College of Electrical Engineering and Renewable Energy, China Three Gorges University, Yichang 443002, China |
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| Abstract: | Single-photon detection technology has important significance for quantum key distribution and even quantum communication. According to single-photon quantum efficiency（SPQE）of single-photon avalanche photodiodes（SPADs）, a strict mathematical model was proposed，Theoretic Criterion for the Performance of Single Photon Avalanche Photodiodes. The model is suitable for SPADs with In052Al048As or InP multiplication layer as well as In052Al048As-InP heterojunction multiplication layer for operating wavelengths of 1.3 and 1.5um. As the function of the device structure, operating voltage, and multiplication layers materials, the model can be used to optimize SPQE, furthermore evaluate and optimize the performance of APDs in Geiger mode. |
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| Keywords: | optoelectronics single-photon quantum efficiency avalanche probability dark count avalanche photodiodes |
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