Field-emission characteristics of chemical vapor deposition-diamond films |
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Authors: | X L Peng |
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Affiliation: | Department of Materials Science and Metallurgy, Cambridge University, Cambridge CB2 3QZ, UK |
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Abstract: | Discontinuous and continuous diamond films with different morphologies and qualities were deposited on n2+-type Si(100) substrates, using the hot-filament chemical vapor deposition (CVD) technique from CH4–H2 gas mixtures. The field-emission characteristics of these diamond films were investigated. The turn-on fields at a 0.01mA/cm2 current density were recorded for all the tested CVD-diamond films. It was found that discontinuous diamond films showed a much lower turn-on field (1.2 V/μm) than continuous ones (20 V/μm). The effective working function of continuous diamond films was around 0.1 eV, while that for discontinuous diamond films is about 0.03 eV. O2 plasma post-deposition sharpening of thick diamond films indicated that the geometrical-field enhancement, caused by the surface topographic changes, has no significant influence on the turn-on field. |
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Keywords: | Chemical vapor deposition-diamond films Field emission Raman spectroscopy Scanning electron microscopy Plasma-etching |
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