C-Si模型分子动力学三维并行仿真算法

对于单晶硅磨削过程模拟的并行算法,依据C-Si系统的分子动力学模型及其特殊模型的特性,通过分析负载均衡和消息通信,利用"最小表面"原则,给出了一种空间分解并行方案。仿真实验证明算法可以缓解负载失衡并且降低通信开销,收集的对比实验数据证实了算法的高效性。

A Parallel Algorithm for 3D Molecular Dynamics on C-Si Model

Parallel algorithm for the grinding molecular dynamics simulation of monocrystalline silicon depends on the model of C-Si systems. According to the special features of this model, an algorithm for parallelization is designed by the analysis of load balance and message communication. The algorithm conforms to the "the minimum superficial" rule and gives a method for spatial decomposition. The simulation experiments prove that this method can improve load balance and decrease inter-process communication. Some collected data verify the efficiency of the algorithm.