| 薄膜SOI材料MOSFET的高温泄漏电流 |
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| 引用本文： | 冯耀兰.薄膜SOI材料MOSFET的高温泄漏电流[J].固体电子学研究与进展,1998,18(4):415-419. |
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| 作者姓名： | 冯耀兰 |
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| 作者单位： | 东南大学微电子中心!南京，210096 |
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| 摘 要： | 在对体硅MOSFET高温泄漏电流研究的基础上,深入研究了SOI材料MOSFET泄漏电流的组成、解析式及高温模拟结果,并与体硅MOSFET进行了比较,证明薄膜SOI材料MOSFET的高温泄漏电流明显减小,因而在高温领域中有着广阔的应用前景。
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| 关 键 词： | 薄膜 绝缘体上硅 全属-氧化物-半导体场效应晶体管 高温 泄漏电流 |
The Leakage Current at High Temperature for SOI MOSFET with Thin Silicon Film |
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| Feng Yaolan.The Leakage Current at High Temperature for SOI MOSFET with Thin Silicon Film[J].Research & Progress of Solid State Electronics,1998,18(4):415-419. |
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| Authors: | Feng Yaolan |
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| Abstract: | The components,analytical formula and simulation results of leakage currnet for SOI MOSFETs at high temperature are deeply studied on the base of the investigation on the leakage current at high temperature for bulk Si MOSFETs. The results of the comparision between these two kinds 0f MOSFET prove that the leakage current of SOI MOSFETs with thin silicon film at high temperature decreases significantly,SOI MOSFETs might be widely used in the high temperature field in the future. |
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| Keywords: | Thin Film SOI MOSFETs High Temperature Leakage Current |
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