Growth of high quality of ZnSe epilayers on (001) vicinally oriented GaAs substrate by molecular beam epitaxy |
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| Affiliation: | 1. State Key Lab of Coastal and Offshore Engineering, Dalian University of Technology, Dalian 116024, PR China;2. Department of Civil Engineerng, Shenyang Jianzhu University, Shenyang, 110015, PR China;1. Department of Mechanical System Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu 400-8511, Japan;2. Thin Film Laboratory, Department of Physics, Bharathiar University, Coimbatore 641 046, TN, India;1. Department of Chemistry, Fudan University, Shanghai 200433, P.R. China;2. Laboratory of Advanced Materials, Fudan University, Shanghai 200433, P.R. China;1. Department of Engineering Science, University of Oxford, Parks Rd, Oxford OX1 3PJ, UK;2. CRISMAT ENSICAEN, 6 Boulevard Maréchal JUIN, 14050 CAEN CEDEX, France;3. Diamond Light Source, Didcot, OX11 0DE, UK |
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| Abstract: | We have investigated the structural properties of ZnSe epilayers that were grown by molecular beam epitaxy on (001) GaAs substrate with different tilt angles. Two-dimensional growth mode increased with increasing tilt of (001) GaAs toward 010] direction. This was confirmed by atomic force microscopy (AFM) analysis and double crystal X-ray diffraction. We have obtained ZnSe of high crystalline quality layers on (001) GaAs off oriented toward 010] direction. Light emitting devices that were fabricated by ZnSe wafers grown on 4° off toward 010] GaAs substrate have longer lifetimes than the ones that were grown on nominal (001) GaAs substrate, which provide an evidence that crystalline quality improvement effects may become apparent by using (001) vicinal substrate surfaces. |
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