High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon |
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| Affiliation: | 1. Department EE & E, Centre for Electronic Materials, University of Manchester, Institute of Science and Technology, P.O. Box 88, Sackville St., Manchester M60 1QD, UK;2. CNRS/MPI High Magnetic Field Laboratory, Grenoble, France;3. Brunel University, UK;4. Institute of Physics, Polish Academy of Science, Al Lotnikow 32/46, Warsaw, Poland;1. Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM, Skudai, 81310, Johor, Malaysia;2. Department of Physics, Sungkyunkwan University, Suwon, 440-746, South Korea;3. Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia;4. College of Science, Physics Department, Alfaisal University, Riyadh, 11533, Saudi Arabia;1. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;2. Pan Solution Technologies, 6-6-40 Aramaki, Aoba-ku, Sendai 980-8579, Japan;3. Dai-ichi Kiden Co., Ltd., 1-54-1 Ishihara, Chofu 182-0034, Japan;1. Materials Science and Informatics Laboratory, Faculty of Science, University of Djelfa, 17000 Djelfa, Algeria;2. Laboratory of Materials Physics and Its Applications, University of M’sila, 28000 M’sila, Algeria;1. Graduate School of Science and Engineering, Saitama University, Saitama, 338-8570, Japan;2. Department of Electronics and Communication Engineering, Hajee Mohammad Danesh Science and Technology University, Dinajpur, 5200, Bangladesh;3. Department of Electrical and Electronic Engineering, University of Rajshahi, Rajshahi, Bangladesh |
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| Abstract: | Using high-resolution Laplace deep-level transient spectroscopy (DLTS), we have compared the electron emission characteristics of vacancy-related defects in silicon. The samples include material irradiated with high-energy protons, material implanted with a heavy ion and silicon irradiated with 2 MeV electrons. We show that in the proton- and electron-irradiated material the DLTS peak in the region of the (- -/-) state of the divacancy at Ec=0.23 eV contains only one feature. The DLTS peak at 250 K which contains the signal derived from the (-/0) state of the divacancy is much larger in ion-implanted silicon than in electron-irradiated silicon. The Laplace DLTS is able to resolve clearly the (-/0) divacancy state and the V–P defect, whereas conventional DLTS shows only a broad peak in that region. |
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