| Double-RESURF结构高压LDMOS模型 |
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| 引用本文： | 杨洋,李泽宏,李彬. Double-RESURF结构高压LDMOS模型[J]. 微电子学, 2007, 37(3): 313-315,319 |
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| 作者姓名： | 杨洋 李泽宏 李彬 |
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| 作者单位： | 电子科技大学,电子薄膜与集成器件国家重点实验室,四川,成都,610054 |
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| 摘 要： | 建立了Double-RESURF结构高压LDMOS器件的MOS VCR(Voltage Control Re-sistance)电路模型。通过分析Double-RESURF LDMOS器件的结构与输入输出特性,得到漂移区电阻的解析式;借助泰勒展式,得到VCR的高阶压控模型,从而建立LDMOS器件的SPICE模型。该模型的解析解和数值解符合良好,而且体现出高压LDMOS的准饱和特性。模型的建立可以很好地指导LDMOS器件的工程应用。
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| 关 键 词： | 准饱和特性 |
| 文章编号： | 1004-3365（2007）03-0313-03 |
| 修稿时间： | 2006-11-162007-03-09 |
Double-RESURF High Voltage LDMOS Model |
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| YANG Yang,LI Ze-hong,LI Bin. Double-RESURF High Voltage LDMOS Model[J]. Microelectronics, 2007, 37(3): 313-315,319 |
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| Authors: | YANG Yang LI Ze-hong LI Bin |
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| Affiliation: | State Key Lab of Electronic Thin Films and Integrated Devices, Univ. o f Elec. Sci. Technol. of China, Chengdu, Sichuan 610054, P. R. China |
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| Abstract: | A micro-model for Double-RESURF high voltage LDMOS has been constructed,which is an MOS VCR(Voltage Control Resistance) circuit model.By analyzing the configuration and characteristics of LDMOS,an analytical expression of drift region resistance has been obtained,and through Taylor's expansion,a higher-order VCR model for drift region resistance has been obtained.And based on these,an SPICE model for LDMOS is constructed.The analytical results of the micro-model are in good agreement with measurements.In addition,the quasi-saturation characteristics of HV LDMOS are included.The model may provide a good guidance for LDMOS engineering application. |
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| Keywords: | Double-RESURF LDMOS VCR |
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