| 大功率硅-硅直接键合静电感应晶闸管的研制 |
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| 引用本文： | 姜岩峰,黄庆安. 大功率硅-硅直接键合静电感应晶闸管的研制[J]. 微电子学, 2005, 35(4): 416-419 |
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| 作者姓名： | 姜岩峰 黄庆安 |
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| 作者单位： | 1. 北方工业大学,信息工程学院,微电子学科,北京,100041
2. 东南大学,电子工程系,MEMS教育部重点实验室,江苏,南京,210096 |
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| 基金项目： | 北京市自然科学基金资助项目（4042013） |
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| 摘 要： | 文章提出了用硅-硅直接键合（SDB）工艺替代静电感应晶闸管（SITH）中的二次外延，有效地提高了栅阴极击穿电压，增强了通过栅极正向阻断阳极电压的能力。对键合过程中硅-硅界面进行了研究，提出了提高界面质量的工艺措施；同时，给出了控制栅阴极击穿电压一致性的方法。对采用此方法制成的SITH的I-V特性进行了测量，并给出了实际测试结果。
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| 关 键 词： | 硅-硅直接键合 静电感应晶闸管 电力器件 |
| 文章编号： | 1004-3365（2005）04-0416-04 |
| 收稿时间： | 2004-11-03 |
| 修稿时间： | 2004-11-03 |
Fabrication of Power SITH Using Silicon Direct Bonding Technology |
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| JIANG Yan-feng,HUANG Qing-an. Fabrication of Power SITH Using Silicon Direct Bonding Technology[J]. Microelectronics, 2005, 35(4): 416-419 |
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| Authors: | JIANG Yan-feng HUANG Qing-an |
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| Abstract: | A novel method for fabricating static induction thyristor (SITH) is presented, in which silicon direct bonding (SDB) is used, instead of the traditional epitaxy technique during the construction of cathode. An obvious improvement has been observed on the breakdown voltage of the gate-cathode, and consequently, the control ability on anode voltage has bee enhanced. The interface between two silicon wafers during the process of bonding is investigated, and techniques to improve the interface quality are proposed. A method to control the breakdown voltage of gate junction with respect to the cathode is described. Measurements are made on I-V characteristics of SITH fabricated with the method, and test results are discussed. |
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| Keywords: | Silicon direct bonding (SDB) Static induction thyristor (SITH) Power device |
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