Influence of source-drain series resistance on MOSFET field-effect mobility |
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| Authors: | Cabon-Till B Ghibaudo G Cristoloveanu S |
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| Affiliation: | ENSERG, Laboratoire de Physique des Composants à Semiconducteurs, Grenoble, France; |
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| Abstract: | A simple but general model for explaining the series resistance dependence of transconductance and field-effect mobility is developed in the letter. This model, which enables a quantitative analysis of series resistance effects on the maximum mobility and the corresponding gate voltage, has been successfully tested on short-channel MOSFETs with various channel lengths and external series resistances. |
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