| Si／Ge应变层异质结价带偏移的剪裁与设计 |
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| 引用本文： | 王仁智 黄美纯. Si／Ge应变层异质结价带偏移的剪裁与设计[J]. 固体电子学研究与进展, 1995, 15(4): 313-318 |
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| 作者姓名： | 王仁智 黄美纯 |
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| 作者单位： | 厦门大学物理系 |
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| 基金项目： | 国家和福建省自然科学基金 |
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| 摘 要： | 讨论应变层异质结价带偏移的剪裁、设计方法，研究Ｓｉ／Ｇｅ应变层异质结价带偏移设计参数与应变条件的关系，基于异质结中平均键能“对齐”，得到适用于Ｓｉ／Ｇｅ异质结价带偏移剪裁与设计的计算公式和图表。
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| 关 键 词： | Si／Ge异质结，价带偏移 |
The Tailoring of Valence-Band Offsets at Strained Si/Ge Interfaces |
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| Wang Renzhi, Huang Meichun, Ke Sanhuang, Li Kaihang. The Tailoring of Valence-Band Offsets at Strained Si/Ge Interfaces[J]. Research & Progress of Solid State Electronics, 1995, 15(4): 313-318 |
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| Authors: | Wang Renzhi Huang Meichun Ke Sanhuang Li Kaihang |
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| Abstract: | In this paper, the tailoring of valence-band offsets at strained St/Ge interfaces is discussed. The relationship between the band tailoring parameters and strain condition for Si and Ge strained-layer in Si/Ge is researched. Based on the alignment of average-bond-energy E. at Si/Ge interfaces, we get the formula and chart which are applicable to the artificial tailoring of valence-band offsets. |
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| Keywords: | Si/Ge Heterojunction Valence-Band Offsets |
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