| 电力电子器件的新发展 |
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| 引用本文： | 杨志晨. 电力电子器件的新发展[J]. 微电子学, 1991, 21(2): 12-23 |
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| 作者姓名： | 杨志晨 |
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| 作者单位： | 机电部第二十四研究所 四川永川 |
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| 摘 要： | 本文概述了基于大规模集成电路制造工艺发展起来的各种新型功率器件的结构、性能水平以及今后的发展趋势,重点是场控器件。
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| 关 键 词： | 电力电子器件 半导体器件 集成器件 |
Recent Development of Power Electronic Devices |
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| Li ZhichenSichuan Institute of Solid-State Circuits,Yongchuan,Chongqing,PRC. Recent Development of Power Electronic Devices[J]. Microelectronics, 1991, 21(2): 12-23 |
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| Authors: | Li ZhichenSichuan Institute of Solid-State Circuits Yongchuan Chongqing PRC |
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| Abstract: | The structures and performances of various types of new power devices based on the LSI IC manufacturing technology, and their future tendency are described with emphasis on the FET controlled devices, |
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| Keywords: | PID (Power Integrated Device) MCT (MOS Controlled Thyristor) SIT (Static Induction Transistor) VDMOS IGBT |
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