Pr和V掺杂的Bi_4Ti_3O_(12)铁电陶瓷的微结构及电性能

采用传统固相烧结法制备了Pr6O11和V2O5共同掺杂的Bi4Ti3O12铁电陶瓷。XRD分析表明,Pr6O11和少量V2O5的掺杂没有引起材料结构的改变。适当比例Pr6O11的掺杂会使材料的铁电性能有明显的改善,但其电输运特性明显不同于3价稀土离子的掺杂。实验表明,钒掺杂对材料铁电性能的影响主要体现在低电场下,不能简单地以氧空位的变化来解释。配比为Bi3.08Pr0.75Ti2.98V0.02O12的样品的电学性能稳定并且具有较大的剩余极化。

Microstructures and electrical properties of Pr6O11 and V2O5 doped Bi4Ti3O12 ferroelectric ceramics

Pr6O11 and V2O5 doped bismuth titanates were prepared by conventional ceramic technique. For all the samples, XRD analyses revealed Bi-layered perovskite structures of Bi4Ti3O12 with a large range of Pr-doping and a small content of V2O5. The results show that a suitable amount of Pr-doping can give a large remnant polarization and a low coercive field, however, its conductive properties are obviously different from three-valence rare-earth ions doped samples. Also, the results show that the effects of V-doping on the ferroelectric properties are mainly embodied in a lower field, this result could not be explained simply by the changes of oxygen vacancies. For Pr and V co-doped samples, the sample of Bi3.08Pr0.75Ti2.98V0.02O12 exhibits steady electrical properties and gives a large polarization.