| 硅上溅射BSCCO薄膜的微结构分析 |
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| 引用本文： | 钱文生,刘融.硅上溅射BSCCO薄膜的微结构分析[J].固体电子学研究与进展,1996,16(3):302-307. |
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| 作者姓名： | 钱文生 刘融 |
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| 作者单位： | 东南大学微电子中心 |
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| 摘 要： | 重点研究了利用偏轴射频溅射的方法在Ｓｉ衬底上生长ＹＳＺ（Ｙ稳定的ＺｒＯ２）缓冲层及Ｂｉ－Ｓｒ－Ｃａ－Ｃｕ－Ｏ超导薄膜的工艺，获得了８２Ｋ的超导转变温度（Ｔｏｎ）。利用扫描原子显微镜和原子力显微镜对不同条件下生长的ＹＳＺ和ＢＳＣＣＯ薄膜进行了观察，提出了ＹＳＺ晶粒填补Ｓｉ衬底上针孔的新功能，并验证了ＢＳＣＣＯ薄膜的螺旋柱状生长机理。
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| 关 键 词： | Si，BSCCO，溅射，生长机理，微结构 |
Microstructural Analysis of BSCCO Films Sputtered on Si Substrates |
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| Qian Wensheng,Liu Rong,Wei Tougli.Microstructural Analysis of BSCCO Films Sputtered on Si Substrates[J].Research & Progress of Solid State Electronics,1996,16(3):302-307. |
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| Authors: | Qian Wensheng Liu Rong Wei Tougli |
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| Abstract: | The techniologics of growing YSZ(Y stablized ZrO2)buffer layer and Bi-Sr-Ca-Cu-O superconducting film (Ton=82 K) by off-axis rf sputtering are studied emphatically. YSZ and BSCCO films grown with different conditions are observed carefully using SEM and AFM, the new function that YSZ crystalline grains fill the voids of St substrate is pointed out,and the spirally growing mechanism of BSCCO film on YSZ/Si is verified. |
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| Keywords: | Si BSCCO Sputter Growing Mechanism Microstructure |
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