| 高压隔离光电耦合器的设计和制作 |
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| 引用本文： | 李尚玲,陈林. 高压隔离光电耦合器的设计和制作[J]. 半导体光电, 2002, 23(5): 315-316,319. DOI: 10.3969/j.issn.1001-5868.2002.05.008 |
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| 作者姓名： | 李尚玲 陈林 |
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| 作者单位： | 重庆光电技术研究所,重庆,400060 |
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| 摘 要： | 分析了影响绝缘材料击穿特性的几个主要因素,在此基础上设计并制作了高压隔离光电耦合器,实验结果表明该器件具有良好的隔离特性和高的可靠性能,隔离电压最大值达10000V.
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| 关 键 词： | 光电耦合器 高压隔离 绝缘材料 封装 |
| 文章编号： | 1001-5868(2002)05-0315-02 |
| 修稿时间： | 2002-07-22 |
Design and Fabrication of High Voltage Isolating Photocoupler |
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| LI Shang-ling,CHEN Lin. Design and Fabrication of High Voltage Isolating Photocoupler[J]. Semiconductor Optoelectronics, 2002, 23(5): 315-316,319. DOI: 10.3969/j.issn.1001-5868.2002.05.008 |
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| Authors: | LI Shang-ling CHEN Lin |
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| Abstract: | Main factors affecting the breakdown properties of insutalors are analysed, on the basis of which a high voltage isolating photocoupler is designed and fabricated. The experiment results show that the device exhibits excellent isolation and high realiability with the peak isolating voltage up to 10 000 V. |
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| Keywords: | photocoupler high voltage isolation insulated material encapsulation |
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