高温CMOS数字集成电路直流传输特性的分析

分析了高温CMOS倒相器和门电路的直流传输特性,建立了相应的解析模型。根据分析,高温MOSFET阈值电压和载流子迁移率的降低,以及MOSFET漏端pn结泄漏电流的增加引起了CMOS倒相器和门电路直流传输特性劣化。在MOSFET漏端pn结泄漏电流的影响下,高温CMOS倒相器和门电路的输出高电平下降,低电平上升,导致了电路的功能失效。给出的理论模型和实验结果一致。

DC Transfer Characteristic Analysis of High Temperature CMOS Digital Integrated Circuits

This paper analysis the DC transfer characteristics of high temperature CMOS inverter and gate circuits,and gives their rnodels. It may be concluded that DC transfer characteristics of high temperature CMOS inverter and gate circuits deteriorate due to reductions in carrier mobility and threshold voltages of MOSFETs and increase of leakage current of MOSFET's drain terminal pn junc-tion at high temperature. It causes invalidity of circuit functions that high output voltage of high temperature CMOS inverter and gate circuits falls and low output voltage rises under influences of leakage current of MOSFET's drain terminal pn junction. The theoretical model given by the paper is found to be in good agreement with experiments.