| Layer Combination Effect on Band Gap Shift of InGaAsP／InP MQWs by Impurity-free Vacancy Disordering |
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| 作者姓名： | ZHAOJie WANGYong-chen FENGZhe-chuan FergusonI |
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| 作者单位： | [1]CollegeofPhys.andElectron.Inform.,TianjinNormalUniversity,Tianjin300074,CHN [2]SchoolofElectr.andComput.Eng.,GeorgiaInstituteofTechnoi.,Georgia30332--0250,USA |
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| 摘 要： | InGaAsP/InP multiple quantum wells with quantum well intermixing have been prepared by impurity-free vacancy disordering. The luminescent characteristics were investigated using photoluminescence and photoreflectance, from which the band gap blue shift was observed, Si3N4, SiO2 and SOG were used for the dielectric layer to enhance intermixing from the outdiffusion of group Ⅲ atoms. All samples were annealed by rapid thermal annealing. The results indicate that the band gap blue shift varies with the dielectric layers and the annealing temperature, The SiO2 capping with an InGaAs cladding layer was successfully used to induce larger band tuning effect in the InGaAsP/InP MQWs than the Si3N4 capping with an InGaAs cladding layer, On the other hand, samples with the Si3 N4- InP cap layer combination also show larger energy shifts than that with SiO2-InP cap layer combination.
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| 关 键 词： | 分子束外延 量子阱 光学性质 磷化铟 InGaAsP |
| 收稿时间： | 2003/7/17 |
Layer Combination Effect on Band Gap Shift of InGaAsP/InP MQWs by Impurity-free Vacancy Disordering |
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| ZHAOJie WANGYong-chen FENGZhe-chuan FergusonI.Layer Combination Effect on Band Gap Shift of InGaAsP/InP MQWs by Impurity-free Vacancy Disordering[J].Semiconductor Photonics and Technology,2004,10(2):73-77,85. |
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| Authors: | ZHAO Jie WANG Yong-chen FENG Zhe-chuan Ferguson I |
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| Abstract: | InGaAsP/InP multiple quantum wells with quantum well intermixing have been prepared by impurity-free vacancy disordering.The luminescent characteristics were investigated using photoluminescence and photoreflectance,from which the band gap blue shift was observed.Si3N4,SiO2 and SOG were used for the dielectric layer to enhance intermixing from the outdiffusion of group III atoms.All samples were annealed by rapid thermal annealing.The results indicate that the band gap blue shift varies with the dielectric layers and the annealing temperature.The SiO2 capping with an InGaAs cladding layer was successfully used to induce larger band tuning effect in the InGaAsP/InP MQWs than the Si3N4 capping with an InGaAs cladding layer.On the other hand, samples with the Si3N4-InP cap layer combination also show larger energy shifts than that with SiO2-InP cap layer combination. |
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| Keywords: | Molecular beam epitaxy Quantum well Optical properties Indium phosphide InGaAsP |
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