| 60%电光效率高功率激光二极管阵列 |
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| 引用本文： | 王俊,白一鸣,崇锋,刘媛媛,冯小明,王勇刚,张广泽,刘素平,马骁宇. 60%电光效率高功率激光二极管阵列[J]. 中国激光, 2008, 35(9): 1323-1327 |
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| 作者姓名： | 王俊 白一鸣 崇锋 刘媛媛 冯小明 王勇刚 张广泽 刘素平 马骁宇 |
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| 作者单位： | 1. 中国科学院半导体研究所,光电子器件国家工程中心,北京,100083
2. 中国科学院半导体研究所,半导体材料重点实验室,北京,100083 |
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| 摘 要： | 设计并制备了980 nm高量子效率和极低光损耗的激光二极管(LD)外延材料和器件.微通道封装1 cm激光二极管阵列在连续(CW)工作条件下最大电光效率达到60.0%,相应的斜率效率和输出光功率分别为1.1W /A和38.2 W.测试得到外延材料的内损耗系数和内量子效率分别为0.58 cm-1和91.6%.测试分析表明,器件电光效率的提高主要在于新型的InGaAs/GaAsP应变补偿量子阱和大光腔结构设计.
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| 关 键 词： | 半导体激光器 电光效率 InGaAs/GaAsP量子阱 大光腔 |
| 收稿时间： | 2007-10-24 |
High Power Laser Diode Array with 60%Electro-Optical Efficiency |
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| Wang Jun,Bai Yiming,Chong Feng,Liu Yuanyuan,Feng Xiaoming,Wang Yonggang,Zhang Guangze,Liu Suping,Ma Xiaoyu. High Power Laser Diode Array with 60%Electro-Optical Efficiency[J]. Chinese Journal of Lasers, 2008, 35(9): 1323-1327 |
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| Authors: | Wang Jun Bai Yiming Chong Feng Liu Yuanyuan Feng Xiaoming Wang Yonggang Zhang Guangze Liu Suping Ma Xiaoyu |
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| Abstract: | The epitaxy material and device for high quantum efficiency and small optical loss 980 nm laser diode(LD) were designed and fabricated.The maximal electro-optical conversion efficiency of the standard 1cm laser bar with micro-channel cooler is 60.0% under continuous-wave(CW) working condition,the corresponding slope efficiency and output power are 1.1 W/A and 38.2 W,respectively.The measured internal loss coefficient and internal quantum efficiency are 0.58 cm-1 and 91.6%,respectively.The result shows that the improvement of electro-optical conversion efficiency is due to new InGaAs/GaAsP strain-compensated quantum well and the large optical-cavity waveguide structure. |
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| Keywords: | semiconductor lasers electro-optical conversion efficiency InGaAs/GaAsP quantum well large optical-cavity |
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