| 不同剂量率下NPN管和NMOSFET管的电离辐照效应 |
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| 引用本文： | 张华林,任迪远,陆妩,崔帅. 不同剂量率下NPN管和NMOSFET管的电离辐照效应[J]. 固体电子学研究与进展, 2005, 25(1): 29-34 |
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| 作者姓名： | 张华林 任迪远 陆妩 崔帅 |
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| 作者单位： | 中国科学院新疆理化技术所,乌鲁木齐,830011;长沙理工大学,长沙,410076;中国科学院新疆理化技术所,乌鲁木齐,830011 |
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| 摘 要： | 研究了 NPN双极晶体管和 NMOSFET在不同剂量率环境下的电离辐照效应。研究表明 ,NPN管在低剂量率辐照下 ,电流增益衰降更为显著 ,且具有真正的剂量率效应 ;而 NMOS管在低剂量率辐照下产生的阈电压负向漂移比高剂量率辐照时小 ,其辐照效应是时间相关效应 ,而非真正的剂量率效应。
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| 关 键 词： | 剂量率效应 NPN管 NMOS管 增益 阈电压 |
| 文章编号： | 1000-3819(2005)01-029-06 |
| 修稿时间： | 2004-03-19 |
The Ionizing Radiation Responses of NPN Transistor and NMOSFET at Different Dose-rates |
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| ZHANG Hualin,REN Diyuan,LU Wu,CUI Shuai. The Ionizing Radiation Responses of NPN Transistor and NMOSFET at Different Dose-rates[J]. Research & Progress of Solid State Electronics, 2005, 25(1): 29-34 |
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| Authors: | ZHANG Hualin REN Diyuan LU Wu CUI Shuai |
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| Affiliation: | ZHANG Hualin 1,2 REN Diyuan 1 LU Wu1 CUI Shuai1 |
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| Abstract: | The ionizing radi ation responses of NPN bipolar transisto r and NMOSFET at different dose-rates ha ve been investigated. The results have s hown that the current gain degradation o f NPN transistor is larger at low dose-r ates than at high dose-rates, and the ef fect is a true dose rate effect, but the threshold voltage of NMOSFET has more s hift at high dose-rates, and it is a tim e dependent effect. |
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| Keywords: | dose-rate effect NPN t ransistor NMOSFET current gain thresh old voltage |
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