A spillover effect of avalanche-generated electrons in buriedp-channel MOSFET's |
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| Authors: | Odanaka S. Hiroki A. |
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| Affiliation: | Matsushita Elect. Ind. Co. Ltd., Osaka; |
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| Abstract: | The authors describe a new mechanism for hot-electron resistance in buried p-channel MOSFETs, which is explained by the spillover of avalanche-generated electrons into the bulk. This effect was observed in a buried p-channel MOSFET formed in a retrograde n-well. It is shown that this effect reduces the hot-electron-induced device degradation even with the greater number of avalanche-generated electrons induced by high bulk doping |
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