Dielectric waveguide for middle and far infrared radiation |
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Authors: | N S Averkiev S O Slipchenko Z N Sokolova I S Tarasov |
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Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
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Abstract: | The possibility of using the normal skin effect in dielectric waveguides for long-wavelength radiation is analyzed. A design of a waveguide integrated with a heterolaser is suggested, in which an undoped layer of GaAs is clad between heavily-doped n- and p-Al x Ga1 ? x As alloy layers, reflecting radiation because of the normal skin effect. It is shown that an efficient waveguide can be formed using n-Al x Ga1 ? x As layers with x < 0.45 and the electron concentration N > 5 × 1018 cm?3 and p-Al x Ga1 ? x As layers of any composition with the hole concentration P ≥ 3 × 1019 cm?3. |
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