Shallow donor impurities in InP bulk crystals grown by the synthesis, solute-diffusion technique

Far-infra-red photoconductivity measurements are used to study residual shallow donor species in InP bulk crystals grown by the synthesis, solute-diffusion technique. The observation of 1s-2p, m =+ 1 Zeeman transitions between the shallow donor-impurity states reveals that two dominant residual donors are included in the InP bulk crystals having carrier concentrations of less than 1 × 1015 cm?3 The donors are tentatively identified as Si and S.