| 复杂数字电路中的单粒子效应建模综述 |
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| 引用本文： | 吴驰,毕津顺,滕瑞,解冰清,韩郑生,罗家俊,郭刚,刘杰. 复杂数字电路中的单粒子效应建模综述[J]. 微电子学, 2016, 46(1): 117-123, 127 |
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| 作者姓名： | 吴驰 毕津顺 滕瑞 解冰清 韩郑生 罗家俊 郭刚 刘杰 |
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| 作者单位： | 中国科学院微电子研究所, 北京 100029;中国科学院硅器件技术重点实验室, 北京 100029,中国科学院微电子研究所, 北京 100029;中国科学院硅器件技术重点实验室, 北京 100029,中国科学院微电子研究所, 北京 100029;中国科学院硅器件技术重点实验室, 北京 100029,中国科学院微电子研究所, 北京 100029;中国科学院硅器件技术重点实验室, 北京 100029,中国科学院微电子研究所, 北京 100029;中国科学院硅器件技术重点实验室, 北京 100029,中国科学院微电子研究所, 北京 100029;中国科学院硅器件技术重点实验室, 北京 100029,中国原子能科学研究院 核物理研究所, 北京 102413,中国科学院近代物理研究所, 兰州 730000 |
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| 基金项目： | 国家自然科学基金资助项目(61176095) |
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| 摘 要： | 单粒子效应产生的软错误是影响航天电子系统可靠性的主要因素之一。对其进行建模是研究单粒子效应机理和电路加固技术的有效方法。介绍了深亚微米及以下工艺中影响模型准确性的几种效应机制,包括脉冲展宽机制、电荷共享机制和重汇聚机制等。重点分析了单粒子瞬态、单粒子翻转的产生模型和单粒子瞬态的传播模型。阐述了基于重离子和脉冲激光的模型验证方法。最后,分析了单粒子效应随特征尺寸的变化趋势,并提出了未来单粒子效应建模技术的发展方向。
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| 关 键 词： | 单粒子瞬态效应 单粒子翻转效应 软错误率 掩蔽效应 |
| 收稿时间： | 2014-12-26 |
Review of Modeling for Single Event Effect in Complex Digital Circuits |
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| WU Chi,BI Jinshun,TENG Rui,XIE Bingqing,HAN Zhengsheng,LUO Jiajun,GUO Gang and LIU Jie. Review of Modeling for Single Event Effect in Complex Digital Circuits[J]. Microelectronics, 2016, 46(1): 117-123, 127 |
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| Authors: | WU Chi BI Jinshun TENG Rui XIE Bingqing HAN Zhengsheng LUO Jiajun GUO Gang LIU Jie |
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| Affiliation: | Institute of Microelectronics., Chinese Academy of Sciences, Beijing 100029, P.R.China;Key Lab.of Silicon Devices Technologies.Chinese Academy of Sciences, Beijing 100029, P.R.China,Institute of Microelectronics., Chinese Academy of Sciences, Beijing 100029, P.R.China;Key Lab.of Silicon Devices Technologies.Chinese Academy of Sciences, Beijing 100029, P.R.China,Institute of Microelectronics., Chinese Academy of Sciences, Beijing 100029, P.R.China;Key Lab.of Silicon Devices Technologies.Chinese Academy of Sciences, Beijing 100029, P.R.China,Institute of Microelectronics., Chinese Academy of Sciences, Beijing 100029, P.R.China;Key Lab.of Silicon Devices Technologies.Chinese Academy of Sciences, Beijing 100029, P.R.China,Institute of Microelectronics., Chinese Academy of Sciences, Beijing 100029, P.R.China;Key Lab.of Silicon Devices Technologies.Chinese Academy of Sciences, Beijing 100029, P.R.China,Institute of Microelectronics., Chinese Academy of Sciences, Beijing 100029, P.R.China;Key Lab.of Silicon Devices Technologies.Chinese Academy of Sciences, Beijing 100029, P.R.China,The Department of Nuclear Physics, Chinese Institute of Atomic Energy, Beijing 102413, P.R.China and Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, P.R.China |
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| Abstract: | The generation of soft errors(SE) due to single event effect(SEE) is a significant reliability challenge in aerospace electronic systems. Modeling is an effective way to study the mechanism of SEE and the technology of hardening circuit. Some physical mechanisms in deep sub-micron technology were introduced, which could affect the accuracy of the modeling, such as propagation-induced pulse broadening, charge-sharing, reconverging and so on. At the same time, a comprehensive discussion was made on the single event transient(SET) generation model, single event upset(SEU) generation model and single event propagation model. Heavy-ion and pulsed-laser were used to verify the SEE model. Finally the scaling trends of SEE were analyzed, and the ongoing research in SEE modeling in the future was proposed. |
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| Keywords: | Single event transient Single event upset Soft error rate Masking effect |
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