| GaAs光导开关lock-on模式的高倍增偶极畴模型 |
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| 引用本文： | 崔海娟,杨宏春,阮成礼,曾刚,吴明和. GaAs光导开关lock-on模式的高倍增偶极畴模型[J]. 压电与声光, 2011, 33(5) |
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| 作者姓名： | 崔海娟 杨宏春 阮成礼 曾刚 吴明和 |
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| 作者单位： | 电子科技大学物理电子学院,四川成都,610054 |
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| 基金项目： | 国家自然科学基金资助项目(10804016); 国家重点实验室室基金资助项目(YAK200501) |
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| 摘 要： | 采用瞬态电脉冲测试电路,对砷化镓(GaAs)光导开关线性与锁定(lock-on)工作模式的临界状态进行了系统的实验测试,得到阈值条件附近波形变化情况及lock-on模式下电压转换效率显著提高现象.根据实验测试结果,提出了高倍增偶极畴模型,并结合载流子雪崩倍增理论,对实验观察到的若干临界实验现象进行了合理的解释.
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| 关 键 词： | 光导开关 线性工作模式 锁定(lock-on)工作模式 高倍增偶极畴模型 |
High-gain Dipole Domain Model Based on the Lock-on Model of GaAs Photoconductive Semiconductor Switch |
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| CUI Haijuan,YANG Hongchun,RUAN Chengli,ZENG Gang,WU Minghe. High-gain Dipole Domain Model Based on the Lock-on Model of GaAs Photoconductive Semiconductor Switch[J]. Piezoelectrics & Acoustooptics, 2011, 33(5) |
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| Authors: | CUI Haijuan YANG Hongchun RUAN Chengli ZENG Gang WU Minghe |
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| Affiliation: | CUI Haijuan,YANG Hongchun,RUAN Chengli,ZENG Gang,WU Minghe (School of Physical Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China) |
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| Abstract: | As for GaAs photoconductive semiconductor switch(PCSS) triggered from linear into lock-on mode,the critical phenomena are systematical measured by a pulsed circuit.The results show that the transformation in the pulse waveform nears the threshold conditions,and the strongly enhanced conversion efficiency in lock-on mode.On the basis of test results,high-gain dipole domain model is introduced in company with carrier avalanche multiplication theory to explain the observed critical phenomena. |
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| Keywords: | photoconductive semiconductor switch linear mode lock-on mode high-gain dipole domain model |
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