| 共溅射钨硅化合物真空快速热退火行为(英文) |
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| 引用本文： | 陈存礼,曹明珠,蒋宏伟,徐伟文,华文裕.共溅射钨硅化合物真空快速热退火行为(英文)[J].固体电子学研究与进展,1989(4). |
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| 作者姓名： | 陈存礼 曹明珠 蒋宏伟 徐伟文 华文裕 |
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| 作者单位： | 南京大学物理系
(陈存礼，曹明珠，蒋宏伟，徐伟文)，华东工学院(华文裕) |
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| 摘 要： |
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The Behavior of Co-Sputtering Tungsten Silicide After Vacuum Rapid Thermal Annealing |
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| Abstract: | The behavior of co-sputtering tungsten silicide after vacuum rapid annealing at 1000-1100℃ for 15s is investigated by Raman scattering, scanning electron microscope, X-ray diffraction, Auger electron spectrum and resistivity measurements. There are two Raman peaks at 331 and 450cm-1, and their intensities increase with the temperature rise of rapid thermal annealing. Scanning electron micrograph exhibits crystallization at 1000℃ and its enhancement with increase of annealing temperature. In addition to the (002), (101), (110), (103), (112) and (200) diffraction peaks of WSi2, there are some W5Si3 peaks in X-ray diffraction pattern. However, the composition of WSi2 is found in Auger electron spectrum at 1000℃, and the measurement results of sheet resistance also conclude WSi2 characteristics. |
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