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Heteroepitaxial technologies on Si for high-efficiency solar cells |
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| Authors: | Masayoshi Umeno Tetsuo Soga Krishnan Baskar Takashi Jimbo |
| Affiliation: | a Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan b Instrument and Analysis Center, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan c Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan |
| Abstract: | The improvements of the AlGaAs crystal quality grown on Si substrate and the AlGaAs/Si tandem solar cell have been studied with varying the growth conditions. The crystal quality of the AlGaAs layer was evaluated by photoluminescence, deep level transient spectroscopy, time-resolved photoluminescence and double crystal X-ray diffraction while varying the thermal cycle annealing temperature. The optimum thermal cycle annealing temperature and the buffer layer thickness for the growth of high efficiency AlGaAs/Si tandem solar cells have been presented. The active-area conversion efficiency of 21.2% and 21.4% (AMO and 1 sun at 27°C) has been demonstrated with two-terminal and four-terminal configuration, respectively, by the perfect photocurrent matching between the top cell and the bottom cell. |
| Keywords: | Tandem solar cell AlGaAs on Si Photoluminescence DLTS X-ray |
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