Laser-activated p-i-n diode switch for RF application |
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| Authors: | Rosen A. Stabile P. Janton W. Gombar A. Basile P. Delmaster J. Hurwitz R. |
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| Affiliation: | David Sarnoff Res. Center, Princeton, NJ; |
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| Abstract: | Results obtained utilizing an optically activated RF switch in the 2-30-MHz range demonstrate the advantages in optically controlled high-power switches from HF to millimeter wave. Testing of a 0.25-mm-thick p-i-n device activated with 116-W peak optical power from a two-dimensional laser array in a 50-Ω system shows isolation between 20.8 and 49 dB, and an average insertion loss of 0.38 dB when measured between 2.5 and 30 MHz |
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