| 铝硅熔体中富集初晶硅提纯硅 |
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| 引用本文： | 余文轴,马文会,吕国强,任永生,薛海洋,戴永年. 铝硅熔体中富集初晶硅提纯硅[J]. 中国有色金属学会会刊, 2013, 23(11): 3476-3481. DOI: 10.1016/S1003-6326(13)62891-5 |
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| 作者姓名： | 余文轴 马文会 吕国强 任永生 薛海洋 戴永年 |
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| 作者单位： | [1]昆明理工大学冶金与能源工程学院,昆明650093 [2]昆明理工大学真空冶金国家工程实验室,昆明650093 |
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| 基金项目： | Project （u 1137601） supported by the Joint Funds of the National Natural Science Foundation of China; Project （51066003） supported by the National Natural Science Foundation of China |
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| 摘 要： | 采用电磁搅拌结合定向凝固技术将过共晶铝硅合金中的初晶硅和铝硅合金分离，并研究不同的杂质元素在铝硅体系中的分布特点。结果表明：杂质元素主要分布在铝硅合金以及铝硅合金和初晶硅的晶界中。同时，根据初晶硅富集区域不同位置硅含量的不同，初晶硅的形貌由鱼骨状变成板状和球状，并且随着样品中不同位置硅含量的增多，初晶硅中的杂质含量降低。样品底部杂质的含量约为10×10^-6，与原料冶金级硅中的杂质含量1248.47×10^-6相比，杂质的去除效果很好。
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| 关 键 词： | 初晶硅 铝硅合金 电磁搅拌 定向凝固 杂质 |
| 收稿时间： | 2013-04-08 |
Si purification by enrichment of primary Si in A1-Si melt |
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| Wen-zhou YU,Wen-hui MA,Guo-qiang LI,Yong-sheng REN,Hai-yang XUE,Yong-nian DAI. Si purification by enrichment of primary Si in A1-Si melt[J]. Transactions of Nonferrous Metals Society of China, 2013, 23(11): 3476-3481. DOI: 10.1016/S1003-6326(13)62891-5 |
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| Authors: | Wen-zhou YU Wen-hui MA Guo-qiang LI Yong-sheng REN Hai-yang XUE Yong-nian DAI |
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| Affiliation: | 1. Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China; 2. National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093, China |
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| Abstract: | The primary silicon crystals and AI-Si alloy in hypereutectic A1-Si melt were separated by electromagnetic stirring and directional solidification. Additionally, the distribution feature of impurities in A1-Si system was verified. The results show that the impurities are mainly located in A1-Si alloy and the grain boundaries between the A1-Si alloy and primary silicon. Furthermore, the morphology of primary silicon changes from fish-bone like to plate like and spheroid due to the different Si contents. The amount of impurities decreases with the increasing of Si content in different positions of the sample. The amount of impurities in the bottom of the sample is approximately 10× 10^-6, which is obviously improved compared with the 1248.47 × 10^- 6 in metallurgical Si. |
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| Keywords: | primary silicon A1-Si alloy electromagnetic stirring directional solidification impurity |
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