| 石英衬底上磁控溅射SiC膜退火形成SiC纳米线 |
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| 引用本文： | 安霞,庄惠照,薛成山,杨利. 石英衬底上磁控溅射SiC膜退火形成SiC纳米线[J]. 微纳电子技术, 2002, 39(1): 37-39 |
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| 作者姓名： | 安霞 庄惠照 薛成山 杨利 |
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| 作者单位： | 山东师范大学半导体研究所,山东,济南,250014 |
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| 基金项目： | 国家自然科学基金资助项目(69890221,60071006) |
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| 摘 要： | 用射频磁控溅射法在石英片上溅射SiC膜,然后在氮气气氛下1150℃退火3h后,在石英衬底上生长出SiC纳米线。用x射线衍射(XRD)、扫描电镜(SEM)和x光电子能谱(XPS)对样品进行了结构、形貌及组分分析。SEM结果表明,SiC纳米线的直径为20～80纳米,其长度可达7～8微米,甚至于长达十几个微米。
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| 关 键 词： | 磁控溅射 氮退火 SiC纳米线 薄膜 |
| 文章编号： | 1671-4776(2002)01-0037-03 |
| 修稿时间： | 2001-09-10 |
Formation of SiC nanowires on SiO2 substrate by magnetron sputtering and annealing |
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| AN Xia,ZHUANG Hui-zhao,XUE Cheng-shan,YANG Li. Formation of SiC nanowires on SiO2 substrate by magnetron sputtering and annealing[J]. Micronanoelectronic Technology, 2002, 39(1): 37-39 |
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| Authors: | AN Xia ZHUANG Hui-zhao XUE Cheng-shan YANG Li |
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| Abstract: | The SiC films were deposited on SiO 2 substrate at room temperature by radio frequency mag-netron sputtering.After the annealing process at the temperature of1150℃in N 2 atmosphere for3h,the SiC nanowires were formed.The x-ray diffraction (XRD),x-ray photoelectron spectroscopy (XPS)and scanning electronic microscopy (SEM)were employed to analyze the structure,composition and surface morphology of the films .SEM results show that the diameters of nanowires are in the range of20～80nm with the length of7～8μm or more than10μm. |
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| Keywords: | magnetron sputtering N 2 annealing SiC nanowires thin films |
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