| 热处理过程对HgCdTe光伏探测器性能的影响 |
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| 引用本文： | 孙柏蔚 胡晓宁. 热处理过程对HgCdTe光伏探测器性能的影响[J]. 红外, 2006, 27(1): 21-25 |
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| 作者姓名： | 孙柏蔚 胡晓宁 |
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| 作者单位： | 中国科学院上海技术物理研究所,上海,200083 |
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| 摘 要： | 本文论述了HgCdTe光伏探测器的I-V特性和暗电流机制,讨论了离子注入后退火、钝化后烘烤、倒焊互联后退火等热处理过程对HgCdTe光伏探测器性能的影响。
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| 关 键 词： | HgCdTe光伏探测器 退火 烘烤 |
| 文章编号： | 1672-8785（2006）01-0021-05 |
| 收稿时间： | 2005-07-12 |
| 修稿时间： | 2005-07-12 |
Effect of Thermal Process on Performance of HgCdTe Photovoltaic Detectors |
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| SUN Bai-wei,HU Xiao-ning. Effect of Thermal Process on Performance of HgCdTe Photovoltaic Detectors[J]. Infrared, 2006, 27(1): 21-25 |
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| Authors: | SUN Bai-wei HU Xiao-ning |
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| Affiliation: | Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China |
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| Abstract: | The HgCdTe Photovoltaic Detector's I-V characteristics and the mechanism of dark current is presented in this paper.The effect of thermal processes like post-implantation annealing,post-passivation baking and post-bonding annealing on the performance of HgCdTe photovoltaic detectors is discussed. |
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| Keywords: | HgCdTe photovoltaic detectors annealing baking |
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