| M-Z型LiNbO3外调制器的优化设计分析 |
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| 引用本文： | 李刚毅.M-Z型LiNbO3外调制器的优化设计分析[J].半导体光电,2010,31(2). |
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| 作者姓名： | 李刚毅 |
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| 作者单位： | 重庆光电技术研究所,重庆,400060 |
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| 摘 要： | 阐述了以M-Z干涉型光波导为波导结构、铌酸锂(LiNbO3)材料电光效应为基础的集成光学强度调制器的工作原理及器件结构,讨论了集成光学强度调制器性能指标,重点讨论了干涉型行波电极结构LiNbO3外调制器的优化设计思想。
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| 关 键 词： | M-Z干涉型光波导 电光效应 集成光学强度调制器 |
Design Optimization of M-Z LiNbO3 Modulators |
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| LI Gangyi.Design Optimization of M-Z LiNbO3 Modulators[J].Semiconductor Optoelectronics,2010,31(2). |
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| Authors: | LI Gangyi |
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| Affiliation: | Chongqing Optoelectronics Research Institute;Chongqing 400060;CHN |
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| Abstract: | For integrated optical intensity modulator based on M-Z optical waveguide and electro-optic effect of LiNbO3, its working principles and structures are presented and the indexes effecting its performance are discussed. An optimization of the design of a traveling-wave LiNbO3 interference modulators is discussed. |
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| Keywords: | M-Z optical waveguide electro-optic effect integrated optical intensity modulator |
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