A new empirical large-signal model for enhancement-mode AlGaAs/InGaAs pHEMTs |
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Authors: | C K Lin W K Wang Y J Chan |
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Affiliation: | Department of Electrical Engineering, National Central University Chungli, Chung-Li 32054, Taiwan, ROC |
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Abstract: | We propose a new large-signal model for AlGaAs/InGaAs pHEMTs, which can simulate the device microwave output power, non-linear characteristics at arbitrary bias points. This model includes a new drain current equation, which is extracted from its derivatives. In addition, gate-to-source and gate-to-drain capacitances are also characterized versus the function of gate and drain biases. The parameter extraction procedure is addressed for the enhancement-mode pHEMTs, which offers an attractive solution for handset power amplifier application because of its positive bias characteristics. Finally, measured and model-predicted dc I–V, S-parameters, and power performance have been compared. |
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Keywords: | Large-signal model AlGaAs/InGaAs pHEMTs Enhancement-mode dc I–V S-parameters Power performance |
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