SiCOI structure fabricated by catalytic chemical vapor deposition |
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Authors: | Kanji Yasui Masasuke Takata Tadashi Akahane |
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Affiliation: | Nagaoka University of Technology, Department of Electrical, Electronics and Information Engineering, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan |
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Abstract: | Epitaxial growth of SiC on SOI substrates using a hot-mesh chemical vapor deposition (CVD) technique was investigated. This technique utilizes a catalytic reaction involving hot tungsten wires arranged in a mesh structure. Using this hot-mesh CVD method, SiC epitaxial growth on SOI substrates with a thin top Si layer was realized without formation of voids, which form readily in the thin Si top layer at temperatures above 800 °C. The SiC film grown on an SOI structure exhibited a large gage factor (GF) of − 27, which is approximately the same as that (GF = − 31.8) of a SiC epitaxial film on Si(100) grown at 1360 °C using atmospheric pressure CVD. |
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Keywords: | Catalytic CVD Tungsten mesh Silicon carbide SiCOI Piezoresistance |
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