| 主结边缘电阻区对高压功率快恢复二极管特性的影响 |
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| 引用本文： | 吴郁,俞敏锋,郭晨,金锐,崔磊.主结边缘电阻区对高压功率快恢复二极管特性的影响[J].北京工业大学学报,2018,44(2):220-224. |
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| 作者姓名： | 吴郁 俞敏锋 郭晨 金锐 崔磊 |
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| 作者单位： | 北京工业大学信息学部,北京,100124;全球能源互联网研究院先进输电技术国家重点实验室,北京,100192 |
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| 基金项目： | 国家科技重大专项资助项目 |
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| 摘 要： | 针对高压功率快恢复二极管的过流关断失效问题,设计了3种主结边缘电阻连接区.为了分析其失效机理,采用仿真工具Sentaurus TCAD,对场屏蔽阳极二极管结构的过流关断进行仿真,重点研究不同电阻连接区对器件关断过程的影响。研究结果表明:电阻连接区结构不同可以引发器件不同位置的烧毁,而当电阻连接区增加到一定长度时,可以有效避免器件烧毁.
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| 关 键 词： | 功率快恢复二极管 过流关断 电阻连接区 |
Influence of the Resistive Region at the Main Junction Edge on the High-voltage Power Fast Recovery Diode Characteristics |
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| WU Yu,YU Minfeng,GUO Chen,JIN Rui,CUI Lei.Influence of the Resistive Region at the Main Junction Edge on the High-voltage Power Fast Recovery Diode Characteristics[J].Journal of Beijing Polytechnic University,2018,44(2):220-224. |
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| Authors: | WU Yu YU Minfeng GUO Chen JIN Rui CUI Lei |
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| Abstract: | To analyze the mechanism of overcurrent turn-off failure of high-voltage fast recovery diodes ( FRD) , three kinds of resistive connection regions at the main junction edge were designed. Overcurrent turn-off processes of high-voltage FRDs with the field shielded anode were simulated and analyzed by using the simulation tools Sentaurus TCAD, focusing on the different effects of different resistive connection regions. Simulation and experimental results show that different resistive regions can trigger the device burn-out at different locations. When the length of the resistive region increases to a certain length, the device failure can be expected to be avoid. |
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