The anomalous behavior of hydrogenated/unhydrogenated polysiliconthin-film transistors under electric stress |
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| Authors: | Lee KY Fang YK Chen CW Huang KC Liang MS Wuu SG |
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| Affiliation: | Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan; |
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| Abstract: | The characteristics of high-temperature processed thin-film transistors (TFT's) with/without plasma hydrogenation under the stress condition of Vds=-15 V and Vgs=0 V have been investigated and compared. It is found that, after stress, the subthreshold swing is greatly improved for unhydrogenated TFT's but not for hydrogenated TFT's. Also, the off-state current is deteriorated for unhydrogenated TFT's but, on the contrary, it is improved for hydrogenated TFT's. A model that takes the effect of hydrogen passivation into account is proposed to interpret the anomalous behavior of TFT's under electric stress |
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