第三代红外焦平面基础技术的研究进展

叙述了围绕第三代红外焦平面的需求所进行的HgCdTe分子束外延以及台面结芯片技术研究的一些成果。对GaAs、Si基大面积异质外延、p型掺杂以及台面刻蚀等主要难点问题进行了阐述。研究表明，7.6 cm(3 in)材料的组分均匀性良好，晶格失配引发的孪晶缺陷可以通过合适的低温成核方法得到有效抑制。在GaAs和Si衬底上外延的HgCdTe材料的(422)X射线衍射半峰宽的典型值为55″~75″。对ICP技术刻蚀HgCdTe的表面形貌、刻蚀速率、反应微观机理、负载效应和刻蚀延迟效应以及刻蚀损伤进行了研究，得到了高选择比的掩模技术和表面光亮、各向异性较好的刻蚀形貌。采用HgCdTe多层材料试制了长波n?蛳on?蛳p以及p?蛳on?蛳n型掺杂异质结器件以及双色红外短波/中波焦平面探测器，取得了一些初步结果。

Recent progress of the 3rd generation infrared FPAs

Research results on molecular-beam epitaxial growth of HgCdTe and FPA fabrications with mesa architecture focusing on the requirements by the 3rd generation of infrared focal plane arrays are described, and the growth of HgCdTe on GaAs and Si wafers, p-type doping as well as mesa fabrication are expatiated. A good composition uniformity was observed over 3-in HgCdTe wafers.And the twins induced by the large lattice mismatch could be depressed by a proper procedure of low temperature nucleation. A typical value of FWHM of (422) X-ray diffraction was found to be 55″-75″ for epilayers grown on GaAs and Si. The ICP dry etching technique for HgCdTe is studied, and some good results on surface morphology, damage, as well as anisotropic mesa shaping were obtained. The multilayered structures HgCdTe were developed into LW n-on-p, p-on-n as well as SW/MW dual color FPA fabrications, the preliminary results are reported.