温度对碲镉汞光伏芯片I-V特性的影响

对室温工作的短波碲镉汞光伏芯片进行了步进温度烘烤实验。烘烤温度从60 ℃开始，步长为5 ℃，到120 ℃结束，每个温度下的烘烤时间一般为24 h。实验结果显示当烘烤温度达到95 ℃以上时，I-V测试结果中反偏部分的电流有明显增大。通过理论分析得到扩散电流和产生复合电流是实验芯片的主要电流机制；较高温度的烘烤在势垒区内产生大量的缺陷，从而降低芯片的少子寿命，使扩散电流增大；同时芯片表面钝化层内的缺陷数目也在温度作用下增加，引起芯片表面复合速度增加。

Temperature effect on I-V characteristics of the HgCdTe diodes

Step-temperature baking experiments are carried out on HgCdTe short wavelength diodes which work at room temperature. The baking temperature ranging from 60 to 120 ℃ with a 5 ℃ step. Experimental results show that the reverse current increased obviously when baking temperature was higher than 95 ℃. Theoretical analyses show that the main current mechanisms of the diodes are diffusion current and g-r current. It also shows that higher temperature baking can induce large numbers of defects in depletion region,which decreases the minority carrier lifetime and resultes in the increasing of diffusion current. Simultaneously, defects in the passivation layer of the device surface are also increased with the increasing of the baking temperature and also the surface recombination velocity.