High‐Performance,Low‐Operating‐Voltage Organic Field‐Effect Transistors with Low Pinch‐Off Voltages |
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Authors: | Weiping Wu Yunqi Liu Ying Wang Hongxia Xi Xike Gao Chongan Di Gui Yu Wei Xu Daoben Zhu |
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Affiliation: | 1. Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences Beijing 100080 (P.R. China);2. Graduate University of Chinese Academy of Sciences Beijing 100039, China |
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Abstract: | Organic field‐effect transistors suffer from ultra‐high operating voltages in addition to their relative low mobility. A general approach to low‐operating‐voltage organic field‐effect transistors (OFETs) using donor/acceptor buffer layers is demonstrated. P‐type OFETs with acceptor molecule buffer layers show reduced operating voltages (from 60–100 V to 10–20 V), with mobility up to 0.19 cm2 V?1 s?1 and an on/off ratio of 3 × 106. The subthreshold slopes of the devices are greatly reduced from 5–12 V/decade to 1.68–3 V/decade. This favorable combination of properties means that such OFETs can be operated successfully at voltages below 20 V (|VDS| ≤ 20 V, |VGS| ≤ 20 V). This method also works for n‐type semiconductors. The reduced operating voltage and low pinch‐off voltage contribute to the improved ordering of the polycrystalline films, reduced grain boundary resistance, and steeper subthreshold slopes. |
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Keywords: | Field‐effect transistors organic Pentacenes Device performance Flexible electronics Thin films Charge‐carrier mobility |
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