Analytic expression for the Fowler–Nordheim V–I characteristic including the series resistance effect |
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Authors: | E. Miranda F. Palumbo |
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Affiliation: | a Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain;b Consejo Nacional de Investigaciones Científicas y Técnicas – Comisión Nacional de Energía Atómica (CONICET-CNEA), Av. Gral. Paz 1499, 1650 Buenos Aires, Argentina |
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Abstract: | It is shown in this communication that the Fowler-Nordheim (FN) tunneling expression for the current-voltage (I-V) characteristic can be analytically inverted so that an exact expression for the voltage-current (V-I) characteristic can be obtained. The solution of the resulting implicit equation is found using the Lambert W function, i.e. the solution of the transcendental equation wew = x. The reported expressions are supported by experimental I-V curves measured in thin (≈5 nm) SiO2 films in MOS capacitors. The analysis includes the case of a tunneling oxide with a large series resistance. For practical purposes, a closed-form expression for W based on a Padé-type approximation is also provided. |
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Keywords: | MOS Fowler-Nordheim Tunneling |
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