A K-Band High-Gain Down-Conversion Mixer in 0.18 $mu$m CMOS Technology |
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| Authors: | Dukju Ahn Dong-Wook Kim Songcheol Hong |
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| Affiliation: | Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon; |
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| Abstract: | A high gain CMOS down conversion mixer with a gain enhancement technique is presented. This technique includes negative resistance generation, parasitic capacitance cancellation and current-injection. These are implemented with an additional circuitry. This mixer has a conversion gain of 9.12 dB, input 1 dB compression point of -11 dBm at 24 GHz, while consuming 16.2 mW from 1.8 V supply. Between 22 and 26 GHz, the LO-to-RF and RF-to-LO isolations are better than 35 dB and 26 dB, respectively. |
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