CW operation of 1.5 ?m InGaAsP/InP BH lasers with a reactive-ion-etched facet |
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| Authors: | Saito H Noguchi Y Nagai H |
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| Affiliation: | NTT Atsugi Electrical Communication Laboratories, Atsugi, Japan; |
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| Abstract: | The reactive-ion-etching (RIE) technique utilising a TiO2 mask and Cl2-Ar gas is successfully applied to facet mirror fabrication of 1.5 ?m InGaAsP/InP buried-heterostructure (BH) lasers. Room-temperature CW operation has been achieved with a structure having one etched and one cleaved facet. A threshold current value of 30 mA at 25°C has been achieved for a laser with a 380 ?m cavity length. |
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