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Effect of negative substrate bias voltage on the nucleation and growth of Cu films during the initial stage of ion beam deposition |
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| Authors: | Jae-Won Lim Good-Sun Choi Yongfu Zhu Minoru Isshiki |
| Affiliation: | (1) Minerals and Materials Processing Division, Korea Institute of Geoscience & Mineral Resources, Gwahang-no 92, Yuseong-gu, 305-350 Daejeon, Korea;(2) Key Laboratory of Automobile Materials, Ministry of Education, and Department of Materials Science and Engineering, Jilin University, 130025 Changchun, China;(3) Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-8577 Sendai, Japan |
| Abstract: | We focused the effect of a negative substrate bias voltage on the nucleation and growth of Cu films during the initial stage of ion beam deposition. The resultant microstructure of Cu films was observed by atomic force microscopy (AFM). It was found that Cu films with or without a negative substrate bias voltage have a different dependence of nucleation and growth. It was established that the mechanism of nucleation and growth of Cu films is changed to a progressive nucleation and lateral growth by a sufficient migration of adatoms accelerated by applying a negative substrate bias voltage. |
| Keywords: | copper nucleation growth substrate bias voltage atomic force microscopy |
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