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铁电晶体管存储器的读出电路设计
引用本文:何伟,杨健苍,翟亚红,杨成韬,李俊宏. 铁电晶体管存储器的读出电路设计[J]. 压电与声光, 2014, 36(2): 294-296
作者姓名:何伟  杨健苍  翟亚红  杨成韬  李俊宏
作者单位:(电子科技大学 电子薄膜与集成器件国家重点实验室,四川 成都 610054)
基金项目:国家自然科学基金资助项目(61204084)
摘    要:通过对铁电晶体管电学特性分析,提出了铁电晶体管的仿真模型,并设计了一种新型单管(1T)结构的读出电路。通过此模型进行了仿真验证,并与传统双管(2T)结构的电流放大读出电路的仿真结果进行对比,结果表明,新型1T结构读出电路在读出速度,可靠性及电路结构大小等方面均有提高。

关 键 词:铁电晶体管  仿真模型  单管结构  读出电路

Design of Readout Scheme for Ferro Electric Field Effect Transistor
HE Wei,YANG Jiancang,ZHAI Yahong,YANG Chengtao and LI Junhong. Design of Readout Scheme for Ferro Electric Field Effect Transistor[J]. Piezoelectrics & Acoustooptics, 2014, 36(2): 294-296
Authors:HE Wei  YANG Jiancang  ZHAI Yahong  YANG Chengtao  LI Junhong
Affiliation:(State Key Lab. of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu 610054, China)
Abstract:By analyzing the electronic property of ferro electric field effect transistor (FeFET), the simulation module of FeFET was proposed and a new readout scheme for 1T type was designed. Based on the simulation module, the function of scheme was testified. Compare to the simulation result of tradition current based readout scheme for 2T type, the new readout scheme for 1T type was faster, with further improvement on the reliability and circuit structure.
Keywords:FeFET  simulation module  1T type  readout schematic
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