| Ka波段具有宽锁定范围高注入灵敏度的分频器* |
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| 引用本文： | 刘法恩,王志功,李智群,李芹,唐路,杨格亮,李竹.Ka波段具有宽锁定范围高注入灵敏度的分频器*[J].半导体学报,2014,35(3):035002-7. |
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| 作者姓名： | 刘法恩 王志功 李智群 李芹 唐路 杨格亮 李竹 |
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| 基金项目： | 国家基础研究发展计划（项目号：2010CB327404）、国家高技术研究发展计划（项目号：2011AA10305）、国家国际科技合作项目（项目号：2011DFA11310）、国家自然科学基金项目（项目号：60901012）、国家自然科学基金项目（项目号：61106024） |
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| 摘 要： | This paper proposes a direct injection-locked frequency divider（ILFD） with a wide locking range in the Ka-band. A complementary cross-coupled architecture is used to enhance the overdriving voltage of the switch transistor so that the divider locking range is extended efficiently. New insights into the locking range and output power are proposed. A new method to analyze and optimize the injection sensitivity is presented and a layout technique to reduce the parasitics of the cross-coupled transistors is applied to decrease the frequency shift and the locking range degradation. The circuit is designed in a standard 90-nm CMOS process. The total locking range of the ILFD is 43.8% at 34.5 GHz with an incident power of –3.5 dBm. The divider IC consumes 3.6 mW of power at the supply voltage of 1.2 V. The chip area including the pads is 0.50.5 mm2.
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| 关 键 词： | 注入锁定 高灵敏度 Ka波段 分频器 注射 开关晶体管 器具 CMOS工艺 |
| 收稿时间： | 7/6/2013 12:00:00 AM |
A Ka-band wide locking range frequency divider with high injection sensitivity |
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| Liu Faen,Wang Zhigong,Li Zhiqun,Li Qin,Tang Lu,Yang Geliang and Li Zhu.A Ka-band wide locking range frequency divider with high injection sensitivity[J].Chinese Journal of Semiconductors,2014,35(3):035002-7. |
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| Authors: | Liu Faen Wang Zhigong Li Zhiqun Li Qin Tang Lu Yang Geliang and Li Zhu |
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| Affiliation: | Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China |
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| Abstract: | This paper proposes a direct injection-locked frequency divider (ILFD) with a wide locking range in the Ka-band. A complementary cross-coupled architecture is used to enhance the overdriving voltage of the switch transistor so that the divider locking range is extended efficiently. New insights into the locking range and output power are proposed. A new method to analyze and optimize the injection sensitivity is presented and a layout technique to reduce the parasitics of the cross-coupled transistors is applied to decrease the frequency shift and the locking range degradation. The circuit is designed in a standard 90-nm CMOS process. The total locking range of the ILFD is 43.8% at 34.5 GHz with an incident power of -3.5 dBm. The divider IC consumes 3.6 mW of power at the supply voltage of 1.2 V. The chip area including the pads is 0.5×0.5 mm2. |
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| Keywords: | IC design CMOS Ka-band direct injection-locked frequency divider ILFD |
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