| 盐酸胍在阻挡层化学机械抛光中对速率选择性及表面形貌的影响 |
| |
| 引用本文： | 李海龙,康劲,刘玉岭,王辰伟,刘虹,高娇娇.盐酸胍在阻挡层化学机械抛光中对速率选择性及表面形貌的影响[J].半导体学报,2014,35(3):036002-6. |
| |
| 作者姓名： | 李海龙 康劲 刘玉岭 王辰伟 刘虹 高娇娇 |
| |
| 作者单位： | [1]Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China [2]Semiconductor Manufacturing International （Beijing） Corp.Beijing 100176, China [3]School of Economics and Management, Hebei University of Technology, Tianjin 300400, China |
| |
| 基金项目： | 02国家重大专项项目(2009ZX02308)，河北省教育厅基金(2011128) ,天津市自然科学基金（10JCZDJC15500) |
| |
| 摘 要： | We propose an alkaline barrier slurry containing guanidine hydrochloride（GH） and hydrogen peroxide.The slurry does not contain any corrosion inhibitors, such as benzotriazole（BTA）. 3-inch samples of tantalum copper and oxide were polished to observe the removal rate. The effect of GH on removal rate selectivity along withhydrogenperoxidewasinvestigatedbycomparingslurrycontainingGHandH2O2withslurrycontainingonly GH. Details about the tantalum polishing mechanism in an alkaline guanidine-based slurry and the electrochemical reactions are discussed. The results show that guanidine hydrochloride can increase the tantalum polishing rate and the selectivity of copper and barrier materials. The variation of the dishing and wire line resistance with the polishing time was measured. The dishing value after a 300 mm pattern wafer polishing suggests that the slurry has an effective performance in topography modification. The result obtained from the copper wire line resistance test reveals that the wire line in the trench has a low copper loss.
|
| 关 键 词： | 去除速率 盐酸胍 阻挡层 表面改性 CMP 抛光速率 晶圆 铜氧化物 |
Effect of guanidine hydrochloride on removal rate selectivity and wafer topography modification in barrier CMP |
| |
| Li Hailong,Kang Jin,Liu Yuling,Wang Chenwei,Liu Hong and Gao Jiaojiao.Effect of guanidine hydrochloride on removal rate selectivity and wafer topography modification in barrier CMP[J].Chinese Journal of Semiconductors,2014,35(3):036002-6. |
| |
| Authors: | Li Hailong Kang Jin Liu Yuling Wang Chenwei Liu Hong and Gao Jiaojiao |
| |
| Affiliation: | Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China;Semiconductor Manufacturing International (Beijing) Corp, Beijing 100176, China;Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China;Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China;School of Economics and Management, Hebei University of Technology, Tianjin 300400, China;Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China |
| |
| Abstract: | We propose an alkaline barrier slurry containing guanidine hydrochloride (GH) and hydrogen peroxide. The slurry does not contain any corrosion inhibitors, such as benzotriazole (BTA). 3-inch samples of tantalum copper and oxide were polished to observe the removal rate. The effect of GH on removal rate selectivity along with hydrogen peroxide was investigated by comparing slurry containing GH and H2O2 with slurry containing only GH. Details about the tantalum polishing mechanism in an alkaline guanidine-based slurry and the electrochemical reactions are discussed. The results show that guanidine hydrochloride can increase the tantalum polishing rate and the selectivity of copper and barrier materials. The variation of the dishing and wire line resistance with the polishing time was measured. The dishing value after a 300 mm pattern wafer polishing suggests that the slurry has an effective performance in topography modification. The result obtained from the copper wire line resistance test reveals that the wire line in the trench has a low copper loss. |
| |
| Keywords: | Guanidine hydrochloride selectivity dishing barrier layer CMP |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
