| InP基转移电子器件接触性能的优化研究 |
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| 引用本文： | 武德起,丁武昌,杨姗姗,贾锐,金智,刘新宇.InP基转移电子器件接触性能的优化研究[J].半导体学报,2014,35(3):036001-5. |
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| 作者姓名： | 武德起 丁武昌 杨姗姗 贾锐 金智 刘新宇 |
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| 基金项目： | 中国科学院知识创新工程国防科技创新重要方向项目子课题“室温工作半导体THz源”（YYYJ-1123-3） |
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| 摘 要： | The effect of the annealing time and annealing temperature on Ni/Ge/Au electrode contacts deposited on the n-type InP contact layer has been studied using a circular transmission line model. The minimum specific contact resistance of 3.210 7 cm2was achieved on the low-doped n-type InP contact layer with a 40 s anneal at 425 ℃. In order to improve the ohmic contact and reduce the difficulty in the fabrication of the high doped InP epi-layer, the doping concentration in the InP contact layer was chosen to be 51018cm 3in the fabrication of transferred electronic devices. Excellent differential negative resistance properties were obtained by an electron beam evaporating the Ni/Ge/Au/Ge/Ni/Au composite electrode on an InP epi-layer with a 60 s anneal at 380 ℃.
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| 关 键 词： | InP基 欧姆接触 电子器件 优化 退火时间 传输线模型 比接触电阻 金电极 |
Optimization of ohmic contact for InP-based transferred electronic devices |
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| Wu Deqi,Ding Wuchang,Yang Shanshan,Jia Rui,Jin Zhi and Liu Xinyu.Optimization of ohmic contact for InP-based transferred electronic devices[J].Chinese Journal of Semiconductors,2014,35(3):036001-5. |
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| Authors: | Wu Deqi Ding Wuchang Yang Shanshan Jia Rui Jin Zhi and Liu Xinyu |
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| Affiliation: | Key Laboratory of Microelectronics Devices & Integrated Technology, Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;School of Physics and Electrical Information Science, Ningxia University, Yinchuan 750021, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | circular transmission line model specific contact resistance InP transferred electronic devices differential negative resistance |
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| Keywords: | circular transmission line model specific contact resistance InP transferred electronic devices differential negative resistance |
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