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Low noise wide bandgap SiC based IMPATT diodes at sub-millimeter wave frequencies and at high temperature |
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| Authors: | J Pradhan S R Pattanaik S K Swain and G N Dash |
| Affiliation: | School of Physics Sambalpur University, Jyoti Vihar, Burla, Sambalpur, Odisha 767019, India;Apex Institute of Technology and Management, Bhubaneswar, Odisha 752101, India;School of Physics Sambalpur University, Jyoti Vihar, Burla, Sambalpur, Odisha 767019, India;School of Physics Sambalpur University, Jyoti Vihar, Burla, Sambalpur, Odisha 767019, India |
| Abstract: | We have presented a comparative account of the high frequency prospective as well as noise behaviors of wide-bandgap 4H-SiC and 6H-SiC based on different structures of IMPATT diodes at sub-millimeter-wave frequencies up to 2.18 THz. The computer simulation study establishes the feasibility of the SiC based IMPATT diode as a high power density terahertz source. The most significant feature lies in the noise behavior of the SiC IMPATT diodes. It is noticed that the 6H-SiC DDR diode shows the least noise measure of 26.1 dB as compared to that of other structures. Further, it is noticed that the noise measure of the SiC IMPATT diode is less at a higher operating frequency compared to that at a lower operating frequency. |
| Keywords: | IMPATT silicon carbide terahertz (THz) science |
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